PART |
Description |
Maker |
L9D3256M32DBG2 |
16-32 Gb, DDR3, 256-512M x 32 Dual Channel Memory Module
|
LOGIC Devices Incorpora...
|
IDT72V8985 IDT72V8985DB IDT72V8985J IDT72V8985PV I |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256 256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology IDT
|
IDT728985 IDT728985DB IDT728985J IDT728985J8 IDT72 |
TSI-TDM Switches 256 x 256 Time Slot Interchange Digital Switch, 5.0V 256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 5.0V
|
Integrated Device Technology IDT
|
K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
HMP351U6AFR8C-S6 HMP351U6AFR8C-S5 HMP351U7AFR8C-S5 |
512M X 64 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, UBDIMM-240 240pin DDR2 SDRAM Unbuffered DIMMs based on 2Gb A version 512M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
EDE5104ABSE EDE5104ABSE-5C-E EDE5108ABSE-5C-E EDE5 |
(EDE51xxABSE) 512M bits DDR2 SDRAM 512M bits DDR2 SDRAM 64M X 8 DDR DRAM, 0.5 ns, PBGA64 512M bits DDR2 SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA64
|
Elpida Memory, Inc.
|
IDT72V70190 IDT72V70190TF IDT72V70190PF |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256 TSI-TDM Switches
|
IDT[Integrated Device Technology]
|
AT93C66B-SSHM-T AT93C56B-SSHM-T |
3-wire Serial EEPROM 2K (256 x 8 or 128 x 16) and 4K (512 x 8 or 256 x 16)
|
ATMEL Corporation
|
M3488 |
256 X 256 DIFGITAL SWITCHING MATRIX
|
ST Microelectronics
|
EDJ1108DJBG-JS-F EDJ1116DJBG-JS-F EDJ1116DJBG-DJ-F |
Differential clock inputs 1G bits DDR3 SDRAM 1G bits DDR3 SDRAM
|
Elpida Memory
|
MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|